The invention provides a body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device. The body-contact MOSFET device includes a substrate. An active region is disposed on the substrate. A gate strip is extended along a first direction disposed on a first portion of the active region. A source doped region and a drain doped region are disposed on a second portion and a third portion of the active region, adjacent to opposite sides of the gate strip. The opposite sides of the gate strip are extended along the first direction. A body-contact doped region is disposed on a fourth portion of the active region. The body-contact doped region is separated from the gate strip by a fifth portion of the active region. The fifth portion is not covered by any silicide features.