Invention Grant
- Patent Title: Semiconductor device having a transparent window for passing radiation
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Application No.: US14639334Application Date: 2015-03-05
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Publication No.: US09620656B2Publication Date: 2017-04-11
- Inventor: Carl Van Buggenhout , Jian Chen
- Applicant: MELEXIS TECHNOLOGIES N.V.
- Applicant Address: BE Tessenderlo
- Assignee: MELEXIS TECHNOLOGIES NV
- Current Assignee: MELEXIS TECHNOLOGIES NV
- Current Assignee Address: BE Tessenderlo
- Agency: Workman Nydegger
- Priority: GB1404108.1 20140307
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L31/0203 ; H01L31/0216 ; H01L27/146

Abstract:
Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.
Public/Granted literature
- US20150255634A1 SEMICONDUCTOR DEVICE HAVING A TRANSPARENT WINDOW FOR PASSING RADIATION Public/Granted day:2015-09-10
Information query
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