Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing same
-
Application No.: US14505216Application Date: 2014-10-02
-
Publication No.: US09620669B2Publication Date: 2017-04-11
- Inventor: Yoshiaki Sugizaki , Hideki Shibata , Akihiro Kojima , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-127967 20100603
- Main IPC: H01L33/48
- IPC: H01L33/48 ; H01L33/00 ; H01L33/38 ; H01L33/44 ; H01L33/50 ; H01L27/15 ; H01L33/62

Abstract:
According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.
Public/Granted literature
- US20150017750A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2015-01-15
Information query
IPC分类: