Invention Grant
- Patent Title: Diode having vertical structure
-
Application No.: US14636933Application Date: 2015-03-03
-
Publication No.: US09620677B2Publication Date: 2017-04-11
- Inventor: Myung Cheol Yoo
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/32 ; H01L33/10 ; H01L33/46 ; H01S5/30 ; H01L33/06 ; H01L33/12 ; H01L33/42 ; H01L33/62 ; H01L33/40

Abstract:
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Public/Granted literature
- US20150179886A1 DIODE HAVING VERTICAL STRUCTURE Public/Granted day:2015-06-25
Information query
IPC分类: