Invention Grant
- Patent Title: Piezoelectric thin-film element, piezoelectric sensor and vibration generator
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Application No.: US14212821Application Date: 2014-03-14
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Publication No.: US09620703B2Publication Date: 2017-04-11
- Inventor: Kenji Shibata , Masaki Noguchi , Kazufumi Suenaga , Kazutoshi Watanabe , Fumimasa Horikiri
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2013-056521 20130319; JP2014-009043 20140122
- Main IPC: H01L41/08
- IPC: H01L41/08 ; H01L41/047 ; H01L41/187 ; H01L41/316 ; B06B1/06

Abstract:
A piezoelectric thin-film element includes a substrate, a lower electrode layer formed on the substrate, a piezoelectric thin-film layer that is formed on the lower electrode layer and includes potassium sodium niobate having a perovskite structure represented by the composition formula of (K1-xNax)NbO3 (0.4≦x≦0.7), and an upper electrode layer formed on the piezoelectric thin-film layer. The piezoelectric thin-film layer is formed such that a value of (Ec−+Ec+)/2 is not less than 10.8 kV/cm and a value of (Pr−+Pr+)/2 is not more than −2.4 μC/cm2 where Ec− and Ec+ are intersection points of a polarization-electric field hysteresis loop and the x-axis indicating an electric field and Pr− and Pr+ are intersection points of the polarization-electric field hysteresis loop and the y-axis indicating polarization.
Public/Granted literature
- US20140285068A1 PIEZOELECTRIC THIN-FILM ELEMENT, PIEZOELECTRIC SENSOR AND VIBRATION GENERATOR Public/Granted day:2014-09-25
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