Invention Grant
- Patent Title: Self-selecting PCM device not requiring a dedicated selector transistor
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Application No.: US14497073Application Date: 2014-09-25
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Publication No.: US09620710B2Publication Date: 2017-04-11
- Inventor: Andrea Redaelli , Agostino Pirovano
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; H01L27/24 ; H01L29/861
Abstract:
A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both rectification and storage capabilities within the PCM architecture.
Public/Granted literature
- US20150008387A1 SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATED SELECTOR TRANSISTOR Public/Granted day:2015-01-08
Information query
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