- Patent Title: Hybrid junction field-effect transistor and active matrix structure
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Application No.: US14884744Application Date: 2015-10-15
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Publication No.: US09620726B2Publication Date: 2017-04-11
- Inventor: Ali Afzali-Ardakani , Tze-Chiang Chen , Bahman Hekmatshoartabari , Ghavam G. Shahidi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Louis J. Percello
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L29/66 ; H01L27/28 ; H01L27/32 ; H01L51/00

Abstract:
Junction field-effect transistors including inorganic channels and organic gate junctions are used in some applications for forming high resolution active matrix displays. Arrays of such junction field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.
Public/Granted literature
- US20160035989A1 HYBRID JUNCTION FIELD-EFFECT TRANSISTOR AND ACTIVE MATRIX STRUCTURE Public/Granted day:2016-02-04
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