Invention Grant
- Patent Title: Quantum cascade laser manufacturing method
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Application No.: US14342895Application Date: 2012-07-04
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Publication No.: US09620921B2Publication Date: 2017-04-11
- Inventor: Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
- Applicant: Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2011-237704 20111028
- International Application: PCT/JP2012/067116 WO 20120704
- International Announcement: WO2013/061656 WO 20130502
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S3/08 ; B82Y10/00 ; B82Y20/00 ; B82Y40/00 ; H01S5/12 ; B29C33/42 ; G03F7/00

Abstract:
A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamper 201 having a second groove pattern P2; a step of making a wafer with an active layer formed on a semiconductor substrate; a step of forming a resist film 304 on a surface on the active layer side of the wafer; a step of pressing the resin stamper against the resist film 304 by air pressure to form a third groove pattern P3 on the resist film 304; and a step of etching the wafer with the resist film 304 serving as a mask to form a diffraction grating on a surface of the wafer.
Public/Granted literature
- US20140199798A1 QUANTUM CASCADE LASER MANUFACTURING METHOD Public/Granted day:2014-07-17
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