Invention Grant
- Patent Title: Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
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Application No.: US14152723Application Date: 2014-01-10
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Publication No.: US09620954B2Publication Date: 2017-04-11
- Inventor: Dean Fernando , Roel Barbosa , Toshio Takahashi
- Applicant: Infineon Technologies Americas Corp.
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H02M7/5387
- IPC: H02M7/5387 ; H02H7/122 ; H01L23/495 ; H01L23/31 ; H01L23/00

Abstract:
According to an exemplary implementation, a semiconductor package includes a multi-phase power inverter having power switches and situated on a leadframe of the semiconductor package. The semiconductor package further includes an over-temperature protection circuit configured to reduce current through the power switches based on multiple temperature threshold values of the power switches and a sensed temperature of the power switches. The over-temperature protection circuit can be configured to enter first and second modes based on the multiple temperature threshold values and the sensed temperature, where the second mode reduces current through the power switches to a greater extent than the first mode.
Public/Granted literature
Information query
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