- Patent Title: Power semiconductor module system having a high isolation strength and method for producing a power semiconductor module arrangement having a high isolation strength
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Application No.: US14809714Application Date: 2015-07-27
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Publication No.: US09622341B2Publication Date: 2017-04-11
- Inventor: Reinhold Bayerer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014110617 20140728
- Main IPC: G06F1/16
- IPC: G06F1/16 ; H05K5/00 ; H05K7/00 ; H05K1/02 ; H05K1/18 ; H05K3/30 ; H01L23/04

Abstract:
A power semiconductor module includes a module housing having a top side, a first terminal group, and a second terminal group. A circuit board, which has a first electrode and a second electrode, is mountable on the power semiconductor module in such a way that in the mounted state each terminal of the first group is electrically conductively connected to the first electrode and each terminal of the second group is electrically conductively connected to the second electrode. A first isolation web and/or a second isolation web is provided. Each isolation web is fixed to the circuit board even in the unmounted state, and arranged between the first terminal group and the second terminal group in the mounted state.
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