Invention Grant
- Patent Title: Forming semiconductor structure with device layers and TRL
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Application No.: US14454370Application Date: 2014-08-07
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Publication No.: US09624096B2Publication Date: 2017-04-18
- Inventor: Michael A. Stuber
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; B81C1/00 ; B81B7/00 ; H01L21/20 ; H01L21/768 ; H01L21/84 ; H01L23/48 ; H01L29/78 ; H01L27/12 ; H01L21/762
Abstract:
A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.
Public/Granted literature
- US20140346622A1 Forming Semiconductor Structure with Device Layers and TRL Public/Granted day:2014-11-27
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