The present invention relates to a special heteropolymer, namely a silicic acid (hetero)poly(co)condensate with positive-resist behavior which is distinguished by polycondensation or copolycondensation of specially modified silanes. The invention relates likewise to monomeric silanes from which the corresponding heteropolymers, i.e. the silicic acid (hetero)poly(co)condensates, can be produced. The silicic acid (hetero)poly(co)condensates according to the invention can be used for a photoresist which has positive-resist behavior. In addition, the invention relates to corresponding methods both for the production of the silanes, the silicic acid (hetero)poly(co)condensates or a method for photochemical structuring of the photoresist according to the invention which is based on the silicic acid (hetero)poly(co)condensates.