- Patent Title: Extreme ultraviolet lithography collector contamination reduction
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Application No.: US14803849Application Date: 2015-07-20
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Publication No.: US09625824B2Publication Date: 2017-04-18
- Inventor: Yen-Cheng Lu , Jeng-Horng Chen , Shun-Der Wu , Tzu-Hsiang Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00

Abstract:
An extreme ultraviolet (EUV) radiation source module includes a target droplet generator, a first laser source, and a second laser source. The target droplet generator is configured to generate a plurality of target droplets. The first laser source is configured to generate a plurality of first laser pulses that heat the target droplets at respective excitation positions thereby generating a plurality of target plumes. At least one of the target droplets is heated at an excitation position different from that of other target droplets. The second laser source is configured to generate a plurality of second laser pulses that heat the target plumes thereby generating plasma emitting EUV radiation.
Public/Granted literature
- US20160320708A1 Extreme Ultraviolet Lithography Collector Contamination Reduction Public/Granted day:2016-11-03
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