Invention Grant
- Patent Title: Leakage current supply circuit for reducing low drop-out voltage regulator headroom
-
Application No.: US14860717Application Date: 2015-09-22
-
Publication No.: US09625924B2Publication Date: 2017-04-18
- Inventor: Francois Ibrahim Atallah , Hoan Huu Nguyen , Keith Alan Bowman , Yeshwant Nagaraj Kolla , Burt Lee Price , Samantak Gangopadhyay
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G05F1/56
- IPC: G05F1/56

Abstract:
Systems and methods relate to a low-dropout voltage (LDO) voltage regulator which receives a maximum supply voltage and provides a regulated voltage to a load, where the load may be a processing core of a multi-core processing system. A leakage current supply source includes a leakage current sensor to determine a leakage current demand of the load of the LDO voltage regulator and a leakage current supply circuit to supply the leakage current demand. In this manner, the leakage current supply source provides current assistance to the LDO voltage regulator, such that the LDO voltage regulator can supply only dynamic current. Thus, headroom voltage of the LDO voltage regulator, which is a difference between the maximum supply voltage and the regulated voltage, can be reduced. Reducing the headroom voltage allows greater number of dynamic voltage and frequency scaling states of the load.
Public/Granted literature
- US20170083031A1 LEAKAGE CURRENT SUPPLY CIRCUIT FOR REDUCING LOW DROP-OUT VOLTAGE REGULATOR HEADROOM Public/Granted day:2017-03-23
Information query
IPC分类: