Providing for programming a two-terminal memory cell array with low sneak path current is described herein. Groups of two-terminal memory cells can be arranged into blocks or sub-blocks, along sets of bitlines and local wordlines. Further, groups of local wordlines within a given sub-block can be electrically isolated from bitlines outside the sub-block. A programming signal can be applied to the two-terminal memory cells from an associated local wordline thereof. Sneak path currents can be mitigated or avoided with respect to bitlines outside a particular sub-block, or on non-selected wordlines of the sub-block. This can significantly reduce a magnitude of combined sneak path current within the sub-block in response to the programming operation.