Invention Grant
- Patent Title: Semiconductor switch
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Application No.: US14842405Application Date: 2015-09-01
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Publication No.: US09627208B2Publication Date: 2017-04-18
- Inventor: Atsushi Ishimaru , Masami Nagaoka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2014-266807 20141227
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K17/81 ; H01L23/62 ; H01L29/68 ; H01L21/263

Abstract:
According to an embodiment, a semiconductor switch includes a first insulating film on a semiconductor substrate, a first semiconductor layer on the first insulating film, a semiconductor switch circuit on the first semiconductor layer, and a wiring on the first insulating film. The first insulating film being between the wiring and the substrate. The wiring connects the semiconductor switch circuit and a terminal. A polycrystalline semiconductor layer is between the wiring and the first insulating film.
Public/Granted literature
- US20160190231A1 SEMICONDUCTOR SWITCH Public/Granted day:2016-06-30
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