Invention Grant
- Patent Title: Pattern forming method and manufacturing method for semiconductor device
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Application No.: US14729474Application Date: 2015-06-03
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Publication No.: US09627218B2Publication Date: 2017-04-18
- Inventor: Kazunori Horiguchi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-033986 20150224
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/308 ; H01L21/027 ; H01L21/033 ; G03F7/00
Abstract:
According to one embodiment, a mask material is formed on a processing layer, a mask pattern with a top surface and a bottom surface is formed on the mask material, a protective film is formed on the top surface of the mask pattern, and after the formation of the protective film, the bottom surface of the mask pattern is etched in a depth direction.
Public/Granted literature
- US20160247687A1 PATTERN FORMING METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2016-08-25
Information query
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