Invention Grant
- Patent Title: Device manufacturing method and device
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Application No.: US14928482Application Date: 2015-10-30
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Publication No.: US09627259B2Publication Date: 2017-04-18
- Inventor: Masamune Takano
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2014-231873 20141114; JP2014-231874 20141114; JP2014-231875 20141114; JP2015-014569 20150128
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/3065 ; H01L21/304 ; H01L21/02 ; H01L21/683 ; H01L23/00

Abstract:
A device manufacturing method according to an embodiment includes forming a film on the second surface side of a substrate having a first surface and the second surface, forming a trench in part of the substrate from the first surface side, while leaving the film to remain, and injecting a substance onto the film from the second surface side, to remove the film at the portion on the second surface side of the trench.
Public/Granted literature
- US20160141209A1 DEVICE MANUFACTURING METHOD AND DEVICE Public/Granted day:2016-05-19
Information query
IPC分类: