Invention Grant
- Patent Title: Integrated circuit device
-
Application No.: US14740286Application Date: 2015-06-16
-
Publication No.: US09627337B2Publication Date: 2017-04-18
- Inventor: Jung-Fu Hsu , Tai-Hung Lin , Chang-Tien Tsai
- Applicant: Novatek Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: Novatek Microelectronics Corp.
- Current Assignee: Novatek Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100111301A 20110331
- Main IPC: H01L23/60
- IPC: H01L23/60 ; H01L23/00 ; H01L27/02
Abstract:
An integrated circuit device including a semiconductor substrate, a first bonding pad structure, a second bonding pad structure, and an internal bonding wire is provided. The first bonding pad structure is disposed on a surface of the semiconductor substrate and exposed outside of the semiconductor substrate. The second bonding pad structure is disposed on the surface of the semiconductor substrate and exposed outside of the semiconductor substrate. The first bonding pad structure is electrically coupled to the second bonding pad structure via the internal bonding wire. The integrated circuit device having a better electrical performance is provided by eliminating internal resistance drop in power supply trails or ground trails, and improving signal integrity of the integrated circuit device.
Public/Granted literature
- US20150287686A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2015-10-08
Information query
IPC分类:
