A semiconductor module includes a first semiconductor switch, a second semiconductor switch, a circuit carrier arrangement and a non-ceramic dielectric isolation layer. The first semiconductor switch and the second semiconductor switch have a first load terminal and a second load termina. The current path of the first semiconductor switch and the current path of the second semiconductor switch are electrically connected in series between a first circuit node and a second circuit node. A circuit carrier arrangement includes a dielectric first isolation carrier section, a dielectric second isolation carrier section, a first upper metallization layer, a second upper metallization layer and a third upper metallization layer, a first lower metallization layer, and a second lower metallization layer. The non-ceramic dielectric isolation layer is applied to the first lower metallization layer and the second lower metallization layer, and its underside forms a heat dissipating contact area of the semiconductor module.