Invention Grant
- Patent Title: Method and apparatus for low resistance image sensor contact
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Application No.: US15005803Application Date: 2016-01-25
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Publication No.: US09627430B2Publication Date: 2017-04-18
- Inventor: Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Chun-Chieh Chuang , Shuang-Ji Tsai , Jeng-Shyan Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18

Abstract:
A method and apparatus for a low resistance image sensor contact, the apparatus comprising a photosensor disposed in a substrate, a first ground well disposed in a first region of the substrate, the first ground well having a resistance lower than the substrate, and a ground line disposed in a region adjacent to the first ground well. The first ground well is configured to provide a low resistance path to the ground line from the substrate for excess free carriers in the first region of the substrate. The apparatus may optionally comprise a second ground well having a lower resistance than the first ground well and disposed between the first ground well and the ground line, and may further optionally comprise a third ground well having a lower resistance than the second ground well and disposed between the second ground well and the ground line.
Public/Granted literature
- US20160141325A1 Method and Apparatus for Low Resistance Image Sensor Contact Public/Granted day:2016-05-19
Information query
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