Invention Grant
- Patent Title: Parasitic channel mitigation in III-nitride material semiconductor structures
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Application No.: US14847325Application Date: 2015-09-08
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Publication No.: US09627473B2Publication Date: 2017-04-18
- Inventor: John Claassen Roberts , Kevin J. Linthicum , Allen W. Hanson , James W. Cook, Jr.
- Applicant: M/A-COM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee Address: US MA Lowell
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/06 ; H01L29/778
Abstract:
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Public/Granted literature
- US20170069713A1 PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES Public/Granted day:2017-03-09
Information query
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