Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14635338Application Date: 2015-03-02
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Publication No.: US09627504B2Publication Date: 2017-04-18
- Inventor: Kohei Oasa , Akira Yoshioka , Yasuhiro Isobe
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2014-186154 20140912
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/66 ; H01L21/306 ; H01L21/308 ; H01L29/423 ; H01L29/06 ; H01L29/10 ; H01L29/40
Abstract:
A semiconductor device includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, source and drain electrodes over the second semiconductor layer, a gate electrode, and a first field plate electrode. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion thinner than the first semiconductor portion. The source and drain electrodes are electrically connected to the second semiconductor layer. The gate electrode is provided over the second semiconductor layer between the source electrode and the drain electrode. The first field plate electrode is provided over the second semiconductor layer and includes a portion that extends from a location over the gate electrode toward the drain electrode and has an end portion that is positioned over the second semiconductor portion.
Public/Granted literature
- US20160079406A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-17
Information query
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