Invention Grant
- Patent Title: Power integrated devices, electronic devices including the same and electronic systems including the same
-
Application No.: US14567521Application Date: 2014-12-11
-
Publication No.: US09627518B2Publication Date: 2017-04-18
- Inventor: Joo Won Park , Kwang Sik Ko
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0080091 20140627
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/06 ; H01L29/739 ; H01L29/10 ; H01L29/08

Abstract:
A power integrated device includes a gate electrode on a substrate, a source region and a drain region disposed in the substrate at two opposite sides of the gate electrode, a drift region disposed in the substrate between the gate electrode and the drain region to be spaced apart from the source region, and a plurality of insulating stripes disposed in an upper region of the drift region to define at least one active stripe therebetween. Related electronic devices and related electronic systems are also provided.
Public/Granted literature
Information query
IPC分类: