Invention Grant
- Patent Title: Optoelectronic device comprising nanostructures of hexagonal type crystals
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Application No.: US13821670Application Date: 2010-09-09
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Publication No.: US09627564B2Publication Date: 2017-04-18
- Inventor: Jean-Francois Guillemoles , Par Olsson , Julien Vidal , Alexandre Freundlich
- Applicant: Jean-Francois Guillemoles , Par Olsson , Julien Vidal , Alexandre Freundlich
- Applicant Address: FR Paris FR Paris US TX Houston
- Assignee: Electricite de France,Centre National de la Recherche Scientifique (CNRS),University of Houston
- Current Assignee: Electricite de France,Centre National de la Recherche Scientifique (CNRS),University of Houston
- Current Assignee Address: FR Paris FR Paris US TX Houston
- Agency: Drinker Biddle & Reath LLP
- International Application: PCT/US2010/048242 WO 20100909
- International Announcement: WO2012/033493 WO 20120315
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L31/0368 ; H01L31/028 ; H01L33/18 ; H01L33/34 ; H01L31/0312
Abstract:
An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.
Public/Granted literature
- US20130168725A1 OPTOELECTRONIC DEVICE COMPRISING NANOSTRUCTURES OF HEXAGONAL TYPE CRYSTALS Public/Granted day:2013-07-04
Information query
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