Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14223149Application Date: 2014-03-24
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Publication No.: US09627571B2Publication Date: 2017-04-18
- Inventor: Naoto Kaguchi , Yoichiro Tarui
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-143562 20130709
- Main IPC: H01L31/16
- IPC: H01L31/16 ; H01L31/167 ; G01K7/01

Abstract:
An optical fiber is provided between a photodiode and a semiconductor active portion of a wide gap semiconductor element forming portion such that emitted light at the time of light emission of the semiconductor active portion of the wide gap semiconductor element forming portion is incident from an incident surface of the optical fiber, and is received from an emitting surface to the photodiode through the optical fiber. Specifically, the incident surface of the optical fiber is arranged so as to be opposed to a side surface portion of the wide gap semiconductor element forming portion, so that the emitted light at the time of light emission of the wide gap semiconductor element is incident on the incident surface.
Public/Granted literature
- US20150014705A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-01-15
Information query
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