Invention Grant
- Patent Title: Electrostatic discharge protection circuit
-
Application No.: US14592850Application Date: 2015-01-08
-
Publication No.: US09627885B2Publication Date: 2017-04-18
- Inventor: Tay-Her Tsaur , Cheng-Cheng Yen
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu, Taiwan
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu, Taiwan
- Agent Winston Hsu; Scott Margo
- Priority: TW103128707A 20140820
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04

Abstract:
An ESD protection circuit includes a plurality of resistors, at least a capacitor, a driving circuit and an ESD clamping device, wherein a first node of each resistor is connected to a first supply voltage, and a second node of each of at least a portion of the resistors is selectively connected to an input node via a corresponding switch respectively, and a first node of the capacitor is connected to a second supply voltage, and a second node of the capacitor is connected to the input node; the driving circuit is arranged to generate a driving signal according to a voltage on the input node; and the ESD clamping device is coupled to the driving circuit, and connected between the first supply voltage and the second supple voltage, and the ESD clamping device is arranged to selectively bypass an ESD current according to the driving signal.
Public/Granted literature
- US20160056625A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2016-02-25
Information query