Invention Grant
- Patent Title: Transmission circuit with leakage prevention circuit
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Application No.: US14801841Application Date: 2015-07-17
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Publication No.: US09628069B2Publication Date: 2017-04-18
- Inventor: Heng-Chia Hsu
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu
- Agent Winston Hsu; Scott Margo
- Priority: TW103124585A 20140717
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/00 ; H03K19/003 ; H03K19/0185

Abstract:
A transmission circuit includes: a first transistor, having a source terminal coupled to a first reference voltage terminal of the transmission circuit and a drain terminal coupled to a first output terminal of the transmission circuit; a second transistor, having a source terminal coupled to a gate of the first transistor, and a drain terminal coupled to the first output terminal of the transmission circuit; and a third transistor, having a drain terminal coupled to the first output terminal of the transmission, a source terminal coupled to a second reference voltage terminal of the transmission, and a gate terminal for receiving a first input signal; wherein the first and second transistors are of a first conducting type, and the third transistor is of a second conducting type different from the first conducting type.
Public/Granted literature
- US20160020761A1 TRANSMISSION CIRCUIT WITH LEAKAGE PREVENTION CIRCUIT Public/Granted day:2016-01-21
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