Invention Grant
- Patent Title: Methods for bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling devices
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Application No.: US14316368Application Date: 2014-06-26
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Publication No.: US09633714B2Publication Date: 2017-04-25
- Inventor: David J. McElroy , Stephen L. Casper
- Applicant: MICRON TECHNOLOGY, INC
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4091 ; G11C7/06 ; G11C7/12 ; G11C11/4094

Abstract:
Voltage coupling/decoupling devices are provided within DRAM devices for improving the bias sensing of sense amplifiers and thus the refresh performance. The voltage coupling/decoupling devices couple or decouple bias voltage from corresponding digit lines coupled to the sense amplifiers. By coupling and decoupling voltage from the digit lines, the time interval between refresh operations can be increased.
Public/Granted literature
- US20140307516A1 BIAS SENSING IN DRAM SENSE AMPLIFIERS THROUGH VOLTAGE-COUPLING/DECOUPLING DEVICE Public/Granted day:2014-10-16
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