Systems, apparatuses and methods may provide for determining a magnitude of a bounce voltage on a source line associated with one or more memory cells and conducting, if the magnitude of the bounce voltage exceeds a threshold, a coarse-level program verification and a fine-level program verification of the one or more memory cells. Additionally, if the magnitude of the bounce voltage does not exceed the threshold, only the fine-level program verification of the one or more memory cells may be conducted. In one example, the coarse-level program verification is bypassed if the magnitude of the bounce voltage does not exceed the threshold.