Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US15185671Application Date: 2016-06-17
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Publication No.: US09633745B2Publication Date: 2017-04-25
- Inventor: Kenichi Abe , Masanobu Shirakawa , Mizuho Yoshida , Takuya Futatsuyama
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C11/56 ; G11C16/10 ; G11C16/32 ; G11C16/08 ; G11C16/16 ; G11C29/42
Abstract:
A semiconductor memory device includes: first to third pages; first to third word line; and row decoder. In data writing, data is written into the first page before data is written into the second page. The row decoder is configured to apply first to third verify voltages to the gates of the first to third memory cells in a program verify operation.
Public/Granted literature
- US20160300621A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2016-10-13
Information query
