Invention Grant
- Patent Title: Vapor deposition of silicon-containing films using penta-substituted disilanes
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Application No.: US14979816Application Date: 2015-12-28
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Publication No.: US09633838B2Publication Date: 2017-04-25
- Inventor: Jean-Marc Girard , Changhee Ko , Ivan Oshchepkov , Kazutaka Yanagita , Shingo Okubo , Naoto Noda , Julien Gatineau
- Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/40 ; C23C16/34 ; C23C16/24
Abstract:
Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
Public/Granted literature
- US20160111272A1 VAPOR DEPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES Public/Granted day:2016-04-21
Information query
IPC分类:
