Invention Grant
- Patent Title: Planarization process
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Application No.: US14722022Application Date: 2015-05-26
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Publication No.: US09633855B2Publication Date: 2017-04-25
- Inventor: Huilong Zhu
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: CN201210505908 20121130
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/28 ; H01L21/3105 ; H01L21/311 ; H01L21/321 ; H01L21/3213 ; H01L29/66 ; H01L21/768 ; C23C14/34 ; H01L21/8234
Abstract:
Planarization processing methods are disclosed. In one aspect, the method includes patterning a material layer and planarizing the patterned material layer by using sputtering. Due to the patterning of the material layer, the loading requirements of nonuniformity on a substrate for sputtering the material layer are reduced, compared with that before the patterning.
Public/Granted literature
- US20150255293A1 PLANARIZATION PROCESS Public/Granted day:2015-09-10
Information query
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