Invention Grant
- Patent Title: System and method for an improved interconnect structure
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Application No.: US14996016Application Date: 2016-01-14
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Publication No.: US09633870B2Publication Date: 2017-04-25
- Inventor: Hsien-Wei Chen , Hao-Yi Tsai , Mirng-Ji Lii , Chen-Hua Yu , Tsung-Yuan Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/52
- IPC: H01L21/52 ; H01L21/48 ; H01L23/31 ; H01L21/56 ; H01L21/768 ; H01L23/525 ; H01L23/00 ; H01L23/532

Abstract:
Presented herein are an interconnect structure and method for forming the same. The interconnect structure comprises a contact pad disposed over a substrate and a connector disposed over the substrate and spaced apart from the contact pad. A passivation layer is disposed over the contact pad and over connector, the passivation layer having a contact pad opening, a connector opening, and a mounting pad opening. A post passivation layer comprising a trace and a mounting pad is disposed over the passivation layer. The trace may be disposed in the contact pad opening and contacting the mounting pad, and further disposed in the connector opening and contacting the connector. The mounting pad may be disposed in the mounting pad opening and contacting the opening. The mounting pad may be separated from the trace by a trace gap, which may optionally be at least 10 μm.
Public/Granted literature
- US20160133482A1 System and Method for an Improved Interconnect Structure Public/Granted day:2016-05-12
Information query
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