- Patent Title: Integrated fan-out structure with guiding trenches in buffer layer
-
Application No.: US15215195Application Date: 2016-07-20
-
Publication No.: US09633895B2Publication Date: 2017-04-25
- Inventor: Po-Hao Tsai , Feng-Cheng Hsu , Li-Hui Cheng , Jui-Pin Hung , Jing-Cheng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/56 ; H01L23/31 ; H01L21/822 ; H01L23/00 ; H01L21/683 ; H01L25/065 ; H01L25/10 ; H01L25/00
Abstract:
A bottom package includes a molding compound, a buffer layer over and contacting the molding compound, and a through-via penetrating through the molding compound. A device die is molded in the molding compound. A guiding trench extends from a top surface of the buffer layer into the buffer layer, wherein the guiding trench is misaligned with the device die.
Public/Granted literature
- US20160329307A1 Integrated Fan-Out Structure with Guiding Trenches in Buffer Layer Public/Granted day:2016-11-10
Information query
IPC分类:
