Invention Grant
- Patent Title: Device manufacturing method of processing cut portions of semiconductor substrate using carbon dioxide particles
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Application No.: US14927211Application Date: 2015-10-29
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Publication No.: US09633903B2Publication Date: 2017-04-25
- Inventor: Masamune Takano
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2015-014570 20150128
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/768 ; H01L21/02
Abstract:
A device manufacturing method according to an embodiment includes forming a film on the side of a second surface of a substrate having a first surface and the second surface, cutting the substrate, cutting the film, and injecting particles onto at least one of a first cut portion formed by the cutting of the substrate and a second cut portion formed by the cutting of the film, to process the at least one of the first cut portion or the second cut portion.
Public/Granted literature
- US20160218037A1 DEVICE MANUFACTURING METHOD Public/Granted day:2016-07-28
Information query
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