Invention Grant
- Patent Title: Three dimensional integrated circuit structure and method of manufacturing the same
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Application No.: US14830740Application Date: 2015-08-20
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Publication No.: US09633917B2Publication Date: 2017-04-25
- Inventor: Wen-Ching Tsai , Ming-Fa Chen , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/66 ; H01L23/31 ; H01L23/538 ; H01L23/00 ; H01L25/00 ; H01L21/56 ; H01L21/82

Abstract:
Provided is a three dimensional integrated circuit structure including a first die, a through substrate via and a connector. The first die is bonded to a second die with a first dielectric layer of the first die and a second dielectric layer of the second die, wherein a first passivation layer is between the first dielectric layer and a first substrate of the first die, and a first test pad is embedded in the first passivation layer. The through substrate via penetrates through the first die and is electrically connected to the second die. The connector is electrically connected to the first die and the second die through the through substrate via.
Public/Granted literature
- US20170053844A1 THREE DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-02-23
Information query
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