Invention Grant
- Patent Title: Substrate structure and method for manufacturing same
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Application No.: US14111093Application Date: 2012-02-23
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Publication No.: US09633952B2Publication Date: 2017-04-25
- Inventor: Lianjun Liu
- Applicant: Lianjun Liu
- Applicant Address: CN Tianjin
- Assignee: MEMSEN ELECTRONICS INC.
- Current Assignee: MEMSEN ELECTRONICS INC.
- Current Assignee Address: CN Tianjin
- Agency: Cantor Colburn LLP
- Priority: CN201110121476 20110511
- International Application: PCT/CN2012/071489 WO 20120223
- International Announcement: WO2012/152104 WO 20121115
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/00 ; H01L21/84 ; H01L21/762 ; H01L21/30 ; H01L23/544 ; H01L25/00 ; B81C1/00
Abstract:
Provided is a substrate structure, including: a first substrate and a second substrate arranged correspondingly. A first surface of the first substrate faces a second surface of the second substrate, wherein the first surface is successively arranged with a conductor interconnection layer and a bonding layer, with the bonding layer connecting the first substrate and the conductor interconnection layer to the second substrate. The substrate structure and a method for manufacturing the same. The second substrate can serve as a support substrate and the first substrate as a substrate for directly manufacturing a device. However, the first substrate is formed by the growth of a crystal without the problem of thickness and stress thereof, thereby avoiding unnecessary stress and further improving the performance of the device formed in the first substrate.
Public/Granted literature
- US20140048910A1 SUBSTRATE STRUCTURE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2014-02-20
Information query
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