Invention Grant
- Patent Title: Forming reliable contacts on tight semiconductor pitch
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Application No.: US15181992Application Date: 2016-06-14
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Publication No.: US09634004B2Publication Date: 2017-04-25
- Inventor: Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz , Ruilong Xie , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/088 ; H01L29/06 ; H01L23/31 ; H01L29/08 ; H01L29/417 ; H01L21/8234
Abstract:
Semiconductor devices include a passivating layer over a pair of fins. A barrier extends through the passivating layer and between the pair of fins and that electrically isolates the fins. Electrical contacts are formed through the passivating layer to the fins. The electrical contacts directly contact sidewalls of the barrier.
Public/Granted literature
- US20170069627A1 FORMING RELIABLE CONTACTS ON TIGHT SEMICONDUCTOR PITCH Public/Granted day:2017-03-09
Information query
IPC分类:
