Invention Grant
- Patent Title: Method, system and device for recessed contact in memory array
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Application No.: US14799471Application Date: 2015-07-14
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Publication No.: US09634063B2Publication Date: 2017-04-25
- Inventor: Fabio Pellizzer , Antonino Rigano , Marcello Mariani , Augusto Benvenuti
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC
- Current Assignee: MICRON TECHNOLOGY, INC
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L27/24 ; H01L45/00 ; H01L29/423 ; H01L21/762 ; G11C13/00 ; H01L21/308
Abstract:
Embodiments disclosed herein may relate to forming a contact region for an interconnect between a selector transistor and a word-line electrode in a memory device.
Public/Granted literature
- US20150318331A1 METHOD, SYSTEM AND DEVICE FOR RECESSED CONTACT IN MEMORY ARRAY Public/Granted day:2015-11-05
Information query
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