Invention Grant
- Patent Title: Methods for producing polysilicon resistors
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Application No.: US14048173Application Date: 2013-10-08
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Publication No.: US09634081B2Publication Date: 2017-04-25
- Inventor: Hermann Gruber , Thomas Gross , Werner Irlbacher , Markus Zundel , Mathias von Borcke , Hans Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/08 ; H01L21/266 ; G01K7/18
Abstract:
A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.
Public/Granted literature
- US20150099341A1 METHODS FOR PRODUCING POLYSILICON RESISTORS Public/Granted day:2015-04-09
Information query
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