A method of manufacturing a display panel having a plurality of lightly doped drain thin film transistors arranged as a matrix includes forming a semiconductor pattern with a predetermined shape on a substrate; forming a dielectric layer covering the semiconductor pattern on the substrate; forming a metal layer on the dielectric layer; forming a photoresist patterns smaller than the semiconductor pattern on the metal layer above the semiconductor pattern; etching the metal layer to form a gate electrode smaller than the photoresist pattern; doping high concentration ions by using the photoresist pattern as a mask to form a pair of highly doped regions on the semiconductor pattern not covered by the photoresist pattern; removing the photoresist pattern; and doping low concentration ions by using the gate electrode as a mask to form a pair of lightly doped regions between the highly doped regions and a part of the semiconductor pattern.