Invention Grant
- Patent Title: Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current
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Application No.: US14184033Application Date: 2014-02-19
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Publication No.: US09634132B2Publication Date: 2017-04-25
- Inventor: Tsung-Hsing Yu , Chia-Wen Liu , Yeh Hsu , Jean-Pierre Colinge
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agent Jones Day
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/66 ; H01L29/06 ; H01L29/165
Abstract:
A semiconductor device is provided having a channel formed from a nanowire with multi-level band gap energy. The semiconductor device comprises a nanowire structure formed between source and drain regions. The nanowire structure has a first band gap energy section joined with a second band gap energy section. The first band gap energy section is coupled to the source region and has a band gap energy level greater than the band gap energy level of the second band gap energy section. The second band gap energy section is coupled to the drain region. The first band gap energy section comprises a first material and the second band gap energy section comprises a second material wherein the first material is different from the second material. The semiconductor device further comprises a gate region around the junction between the first band gap energy section and the second band gap energy section.
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