Invention Grant
- Patent Title: Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
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Application No.: US14267428Application Date: 2014-05-01
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Publication No.: US09634161B2Publication Date: 2017-04-25
- Inventor: Daniela Rodica Radu , Cheng-Yu Lai
- Applicant: Daniela Rodica Radu , Cheng-Yu Lai
- Applicant Address: US DE Dover
- Assignee: DELAWARE STATE UNIVERSITY
- Current Assignee: DELAWARE STATE UNIVERSITY
- Current Assignee Address: US DE Dover
- Agency: RatnerPrestia
- Main IPC: H01L31/032
- IPC: H01L31/032 ; H01L21/02 ; H01L31/072 ; C09D11/52
Abstract:
Thin films comprising crystalline Fe2XY4, wherein X is Si or Ge and Y is S or Se, are obtained by coating an ink comprised of nanoparticle precursors of Fe2XY4 and/or a non-particulate amorphous substance comprised of Fe, X and Y on a substrate surface and annealing the coating. The coated substrate thereby obtained has utility as a solar absorber material in thin film photovoltaic devices.
Public/Granted literature
- US20140326316A1 Nanoscale Precursors for Synthesis Of Fe2(Si,Ge)(S,Se)4 Crystalline Particles and Layers Public/Granted day:2014-11-06
Information query
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