- Patent Title: Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film
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Application No.: US14412055Application Date: 2013-09-03
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Publication No.: US09634162B2Publication Date: 2017-04-25
- Inventor: Ara Cho , Kyung Hoon Yoon , SeJin Ahn , Jae Ho Yun , Young Joo Eo , Jihye Gwak , Kee Shik Shin , SeoungKyu Ahn , Jun Sik Cho , Jin-Su Yoo , Joo Hyung Park
- Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
- Applicant Address: KR
- Assignee: Korea Institute of Energy Research
- Current Assignee: Korea Institute of Energy Research
- Current Assignee Address: KR
- Agency: Rankin, Hill & Clark LLP
- Agent Mark E. Bandy
- Priority: KR10-2012-0150680 20121221
- International Application: PCT/KR2013/007946 WO 20130903
- International Announcement: WO2014/098350 WO 20140626
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; C01B19/00 ; H01L31/18 ; H01L31/032

Abstract:
A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag2Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.
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