The present disclosure provides a semiconductor structure, including a logic region and a memory region adjacent to the logic region. The memory region includes a first Nth metal line of an Nth metal layer, a magnetic tunneling junction (MTJ) over first Nth metal line, and a first (N+1)th metal via of an (N+1)th metal layer, the first (N+1)th metal via being disposed over the MTJ layer. N is an integer greater than or equal to 1. A method of manufacturing the semiconductor structure is also disclosed.