Invention Grant
- Patent Title: RF attenuator device and system
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Application No.: US14836079Application Date: 2015-08-26
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Publication No.: US09634635B2Publication Date: 2017-04-25
- Inventor: Chong Mei , Bo Jensen
- Applicant: Anaren, Inc.
- Applicant Address: US NY East Syracuse
- Assignee: ANAREN, INC.
- Current Assignee: ANAREN, INC.
- Current Assignee Address: US NY East Syracuse
- Agency: Bond, Schoeneck & King, PLLC
- Agent David L. Nocilly
- Main IPC: H01Q1/50
- IPC: H01Q1/50 ; H03H7/25

Abstract:
A device includes a thermally conductive and electrically insulative substrate having a first major surface and a second major surface. A coupling structure is configured to reduce the RF input signal by substantially a predetermined amount of attenuation power. A tuning circuit is characterized by a tuning reactance substantially matched to a predetermined system impedance. A resistor is disposed on a majority of the first major surface and is characterized by a parasitic capacitance that is substantially negated by the tuning reactance. The resistor includes a first resistive portion and a second resistive portion; each of the first resistive portion and the second resistive portion being configured to direct approximately one-half of the attenuation power to the ground portion.
Public/Granted literature
- US20170019084A1 RF ATTENUATOR DEVICE AND SYSTEM Public/Granted day:2017-01-19
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