- Patent Title: Integrated circuit and method that utilize a shape memory material
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Application No.: US14866648Application Date: 2015-09-25
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Publication No.: US09635764B2Publication Date: 2017-04-25
- Inventor: Shipeng Qiu , Shawna Liff , Kayleen L Helms , Joshua D Heppner , Adel Elsherbini , Johanna Swan , Gary M. Barnes
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/18 ; H05K3/32 ; H05K1/14 ; H05K3/36 ; H05K3/22 ; H05K3/30 ; H05K3/00

Abstract:
An integrated circuit that includes a substrate having a shape memory material (SMM), the SMM is in a first deformed state and has a first crystallography structure and a first configuration, the SMM is able to be deformed from a first configuration to a second configuration, the SMM changes to a second crystallography structure and deforms back to the first configuration upon receiving energy, the SMM returns to the first crystallography structure upon receiving a different amount of energy; and an electronic component attached to substrate. In other forms, the SMM is in a first deformed state and has a first polymeric conformation and a first configuration, the SMM changes from a first polymeric conformation to a second polymeric conformation and be deformed from a first configuration to a second configuration, the SMM changes returns to the first polymeric conformation and deforms back to the first configuration upon receiving energy.
Public/Granted literature
- US20170094799A1 INTEGRATED CIRCUIT AND METHOD THAT UTILIZE A SHAPE MEMORY MATERIAL Public/Granted day:2017-03-30
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