Invention Grant
- Patent Title: Method and apparatus for laser dicing of wafers
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Application No.: US14265672Application Date: 2014-04-30
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Publication No.: US09636783B2Publication Date: 2017-05-02
- Inventor: Russell A. Budd , Bing Dang , John U. Knickerbocker
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B23K26/364 ; H01L21/67 ; B23K26/36 ; H01L21/78 ; H01L21/304 ; H01L21/306 ; B23K26/06 ; B23K26/18 ; B23K26/38 ; B23K26/402 ; B23K26/0622 ; B23K101/40 ; B23K103/00

Abstract:
A method includes cutting a semiconductor wafer on a substrate wafer using at least one laser. By setting the laser to a set of parameters that define a laser beam, the laser beam can avoid ablation of the substrate wafer. The laser beam is also set equal to, or within, an ablation threshold of the semiconductor wafer for selectively ablating the semiconductor wafer. The set of parameters includes wavelength, pulse width and pulse frequency.
Public/Granted literature
- US20150318210A1 METHOD AND APPARATUS FOR LASER DICING OF WAFERS Public/Granted day:2015-11-05
Information query
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