Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρT of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ρT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.